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Hyogo University | 論文
- Malignant mesothelioma of the pericardium : Case reports and immunohistochemical studies including Ki-67 expression
- Synovial sarcoma arising from the pleura : a case report with ultrastructural and immunohistological studies
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
- Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
- Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
- Annealing Behavior of Deep Trap Level in p-GaTe
- Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
- Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
- Charge-Balanced Heteroepitaxial Growth of GaAs on Si