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Hoya Corporation Ngl Development Center | 論文
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
- Actinic Mask Inspection Using an EUV Microscope : Preparation of a Mirau Interferometer for Phase-Defect Detection
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- Theory of Angle-Resolved X-Ray Photoemission by Multiple Scattering Cluster Method. II. Damped One-Electron Formulas Derived from Many-Body Theory and Application to Si(111)-(√×√)Ag 3d Spectra