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Gwangju Institute Of Science And Technology | 論文
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Increased Video Compression with Error-Resilience Capability Based on Macroblock Processing(Image Processing and Video Processing)
- A Throughput Enhancement under a Strict Fairness Constraint in OFDMA System
- Performance Analysis of the Improved Droptail Router
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices