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Graduate school of Science and Engineering, Yamaguchi University | 論文
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- A note on multihead on-line turing machines
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Synthesis and Thermoelectric Properties of Silicon Clathrates Sr_8Al_xGa_Si_ with the Type-I and Type-VIII Structures
- Electrochemical properties of Fe2O3-Nano-Loaded Carbon and Fe2O3-Nano/Carbon Mixed Composites for Iron-Air Battery Anodes
- A mechanism for reducing the specific surface area of polycrystalline magnesium hydroxide
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
- Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes