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Graduate School Of Science And Engineering Waseda University | 論文
- Domestic and foreign trends in the prevalence of heart failure and the necessity of next-generation artificial hearts : a survey by the Working Group on Establishment of Assessment Guidelines for Next-Generation Artificial Heart Systems
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
- Infrared Lattice Absorption in Wurtzite GaN
- Purification of Pomacea canaliculata α-Fucosidase Isoforms with Different Thermostabilities
- A-5-34 Closed Form Expression for Bit Error Rate Performance of UWB Signal in the Presence of Inter-Symbol Interference
- Effect of Phosphorus Content of the Magnetic and Electric Properties of Electroless Ni-P Film after Heat Treatment : Magnetism, Magnetic Materials and Devices
- Optimization of the Thickness Ratio of Pd/Si Intermediate Layer in Co/Pd Multilayer Perpendicular Magnetic Recording Medium
- Effect of the Preparation Conditions of a Pd/Si Dual Seedlayer on the Magnetic Properties of Co/Pd Multilayered Perpendicular Magnetic Recording Media
- Effect of the Preparation Conditions of a Pd/Si Dual Seedlayer on the Magnetic Properties of Co/Pd Multilayered Perpendicular Magnetic Recording Media
- Control of Crystal Orientation of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Multi-Seeding Layers
- Effects of H_2 Sintering and Pt Upper Electrode on Metallic Bi Content in Sr_Bi_Ta_2O_9 Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method
- Crystallization Process of Sr_Bi_Ta_2O_9 Thin Films with Different Crystal Orientation Prepared by Chemical Liquid Deposition Using Alkoxide Precursor(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Structural Defects in Sr_Bi_Ta_2O_9 Thin Film for Ferroelectric Memory(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Phase Transition in Ferroelectric SrBi_2Ta_2O_9) Thin Films with Change of Heat-treatment Temperature
- Evaluation of Double-Layered Magnetic Recording Medium Composed of Perpendicular and Longitudinal Anisotropy Layers
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm