スポンサーリンク
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc | 論文
- Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
- Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors(Lasers, Quantum Electronics)
- Application of Brightness of Scanning Electron Microscope Images to Measuring Thickness of Nanometer-Thin SiO_2 Layers on Si Substrates : Semiconductors
- I-V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers
- Experimental Study of Lasing Characteristics of Brillouin/Erbium Optical Fiber Laser(Optoelectronics)
- GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off
- Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
- Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational $X\alpha$ Method
- Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface