スポンサーリンク
Fundamental Research Laboratory Nippon Electric Company Ltd. | 論文
- Sublimation Rate of Silicon in High Vacuum
- On the Polarization of Light from the GaAs Diode Laser
- On the Visibility of 8400 Å Light from GaAs Laser Diodes
- On the Forward V-I Characteristics of the GaAs Laser Diode
- Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End
- Vapor Growth of GaAs in the Polar Direction
- Kinetics of Vapor Growth in the System GaAs-I_2
- Evaporographic Observation of Oscillation Patterns of 3.39 μ in a He-Ne Gaseous Laser
- Semiconducting Properties of Chromium Disilicide