On the Forward V-I Characteristics of the GaAs Laser Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1964-04-15

著者

• Nannichi Yasuo

  Fundamental Research Laboratory Nippon Electric Company Ltd.

• Nannichi Yasuo

  Fundamental Research Laboratory Nippon Electric Co. Limited

• Nannichi Yasuo

  Fundamental Research Laboratory Nippon Electric Co. Ltd.

関連論文

• Sublimation Rate of Silicon in High Vacuum
• On the Polarization of Light from the GaAs Diode Laser
• On the Visibility of 8400 Å Light from GaAs Laser Diodes
• On the Forward V-I Characteristics of the GaAs Laser Diode
• Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End

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