On the Visibility of 8400 Å Light from GaAs Laser Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-04-15
著者
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Nannichi Yasuo
Fundamental Research Laboratory Nippon Electric Company Ltd.
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Nannichi Yasuo
Fundamental Research Laoratory Nippon Electric Company Limited
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Nannichi Yasuo
Fundamental Research Laboratory Nippon Electric Co. Limited
関連論文
- Sublimation Rate of Silicon in High Vacuum
- On the Polarization of Light from the GaAs Diode Laser
- On the Visibility of 8400 Å Light from GaAs Laser Diodes
- On the Forward V-I Characteristics of the GaAs Laser Diode
- Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End