Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End

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概要

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• We have observed the variation of threshold currents of GaAs laser diodes with the change of reflectivity on one end as well as their variation with temperatures at 77 and 4°K. The result seems to be interpreted in the light of a simple model that the gain in the active region is proportional to the current density. Calculated values for the loss and gain factors at 77°K, ranged from 12 to 55 cm^<-1> and 0.25 to 0.6×10^<-2> cm/A, respectively. These values were found to change appreciably with temperatures.

• 社団法人応用物理学会の論文
• 1965-01-15

著者

• Nannichi Yasuo

  Fundamental Research Laboratory Nippon Electric Company Ltd.

• Nannichi Yasuo

  Fundamental Research Laboratory Nippon Electric Co. Limited

関連論文

• Sublimation Rate of Silicon in High Vacuum
• On the Polarization of Light from the GaAs Diode Laser
• On the Visibility of 8400 Å Light from GaAs Laser Diodes
• On the Forward V-I Characteristics of the GaAs Laser Diode
• Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End

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