Kinetics of Vapor Growth in the System GaAs-I_2
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概要
- 論文の詳細を見る
The epitaxial vapor growth of GaAs in a closed tube containing iodine as a carrier gas is studied. Results obtained indicate clearly that the process is diffusion controlled. The transport rate is determined as functions of operations temperature T and of initial iodine concentration C_0. The rate at a give C_0 has a maximum at T_<max> which increase with increasing C_0. Taking C_0 as the variable and fixing the temperature T, the rate has also a maximum. These facts can be explained satisfactorily on the bases of Fick's diffusion law and of the following chemical equilibrium: 2GaAs+GaI_3⇄3GaI+1/2As_4.
- 社団法人応用物理学会の論文
- 1963-12-15
著者
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Kano Takao
Fundamental Research Laboratory Nippon Electric Company Ltd.
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Kikuchi Sadao
Fundamental Research Laboratory Nippon Electric Company Ltd.
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OKADA TAKASHI
Fundamental Research Laboratory, Nippon Electric Company
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Okada Takashi
Fundamental Research Laboratory Nippon Electric Company Ltd.
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Okada Takashi
Fundamental Research Laboratory Nippon Electric Company
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Okada T.
Fundamental Research Laboratory, Nippon Electric Company Ltd.
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Okada T.
Fundamental Research Laboratory, Nippon Electric Company
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