Vapor Growth of GaAs in the Polar Direction

概要

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Crystals of GaAs and of Ge are grown on the {111} surfaces of GaAs and of Ge single crystals by the vapor phase reactions using iodine as the carrier gas. GaAs is grown epitaxially on the Ga (111) surface and not on the As (1^^-1^^-1^^-) surface. These phenomena seem to be contrary to the fact that more perfect crystals of GaAs tend to grow from the melts on the As (1^^-1^^-1^^-) surfaces than on the Ga (111) surfaces. It is also observed that (i) Ge is grown epitaxially both on the Ga (111) and on the As (1^^-1^^-1^^-) surfaces, (ii) GaAs is grown epitaxially on the Ge (111) surface, its growth direction being mainly in the <111> axis of GaAs and (iii) growth of GaAs in the <1^^-1^^-1^^-> direction takes place locally on the Ge (111) surface, its area decreasing gradually in the course of growth. A possible explanation is proposed.
社団法人応用物理学会の論文
1963-04-15