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Fujitsu Ltd. Kawasaki Jpn | 論文
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
- On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Cu Multiply Twinned Particle Precipitation in Low-Temperature Fired Ni-Zn-Cu Ferrite
- High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
- Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe
- Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- High-Resolution Analysis on Patterned Resist by Auger Electron Spectroscopy
- Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- Resolution Limit for Optical Lithography Using Polarized Light Illumination