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Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan | 論文
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems
- Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
- Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication
- An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
- 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)