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Fujitsu Laboratories Ltd | 論文
- Electrochromism in a Thin-Film Device Using Li_2 WO_4 as an Li-Electrolyte
- Mechanism of Spectral Sensitization of Zn0 Coadsorbing p-Type and n-Type Dyes
- Influence of Illumination on the Surface Potential of ZnO Adsorbing p-Type Dye and n-Type Dye
- Contact Potential Difference of ZnO Layer Adsorbing p-Type Dye and n-Type Dye
- Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins
- 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Row-by-Row Dynamic Source-Line Voltage Control (RRDSV) Scheme for Two Orders of Magnitude Leakage Current Reduction of Sub-1-V-V_SRAM's(Electronic Circuits)
- サブ1VのSRAMにおけるリークを2桁以上削減する新手法RRDSV(システムLSIの応用とその要素技術,専用プロセッサ,プロセッサ,DSP,画像処理技術,及び一般)
- サブ1VのSRAMにおけるリークを2桁以上削減する新手法RRDSV(システムLSIの応用とその要素技術,専用プロセッサ,プロセッサ,DSP,画像処理技術,及び一般)
- サブ1VのSRAMにおけるリークを2桁以上削減する新手法RRDSV(システムLSIの応用とその要素技術,専用プロセッサ,プロセッサ,DSP,画像処理技術,及び一般)
- Scaling Law for Secondary Cosmic-Ray Neutron-Induced Soft-Errors in DRAMs
- Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs
- Circuits for CMOS High-Speed I/O in Sub-100nm Technologies (Interface and Interconnect Techniques, VLSI Design Technology in the Sub-100nm Era)
- Improvement of Magnetic Recording Characteristics by Narrowing the Array Pitch of Nanohole Patterned Media
- Mo Contamination in p/p^+ Epitaxial Silicon Wafers
- 9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
- Automotive FM-CW Radar with Heterodyne Receiver (Special Issue on Millimeter-wave Short-range Application Systems Technology)
- An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors
- Specifications of insilicoML 1.0 : A Multilevel Biophysical Model Description Language
- Characterization of DLC films by EELS and electron holography
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