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Fujitsu Lab. Ltd. Atsugi Jpn | 論文
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
- New Protective Groups in Alicyclic Methacrylate Polymers for 193nm Resists
- High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
- Dielectric Investigation of [(SrTiO_3)_6(BaTiO_3)_6]_2 Multilayer Capacitor : Electrical Properties of Condensed Matter
- Dielectric Investigation of BaTiO_3 Thin-Film Capacitor
- Phase Transition of Single-Crystal C_ Films on GaAs(111) Substrates
- Epitaxial Growth of Single-Crystal C_ Films on GaAs (111) Substrates
- A Novel Injection-Molded Precision Plastic Platform for the Passive Alignment of a Polymer Waveguide Film and Optical Fibers
- TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
- Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- Effects of N_2O Plasma Treatment for Low Temperature Polycrystalline Silicon TFTs(Special Issue on Electronic Displays)
- Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions