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Fuji Xerox Co. Ltd. Kanagawa Jpn | 論文
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Flash Lamp Pumped Tunable Forsterite Laser
- Optical Properties and Lasing of Ti^ Doped BeAl_2O_4
- Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
- Characteristics of Platinum-Palladium Alloy Film for X-Ray Mirrors
- A Wide-Bandwidth-Output Direct Digital Synthesizer with Multiple Delay Generators
- A Wide-Bandwidth-Output Direct Digital Synthesizer with Plural Delay Generators
- Influence of Hydrogen-Surfactant Coverage on Ge/Si(001) Heteroepitaxy : Surfaces, Interfaces, and Films
- Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-Flight Elastic Recoil Detection Analysis for In Situ Monitoring of Surface Processes in Gas Phase Atmosphere : Surfaces, Interfaces, and Films
- Structural Analysis of 6H-SiC(0001)√ × √ Reconstructed Surface
- Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface
- Electro-Optical Q-Switched Tunable Forsterite Laser
- Effect of the Dipole-Dipole Interaction on the Self-Assembly of Cyclodextrin Inclusion Complexes
- Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
- Scanning Tunneling Microscopy on Ordered Self-Assemblies of Cyclodextrin lnclusion Complexes Formed by Substrate-Induced Two-Dimensional Crystal Growth
- 0.8 μm CMOS Process Compatible 60 V-100 mΩ・mm^2 Power MOSFET on Bonded SOI
- 0.8μm CMOS Process Compatible 60V - 100mΩ・mm^2 Power MOSFET on Bonded SOI
- Smoothing Roughness of SiC Membrane Surface for X-Ray Masks : X-Ray Lithography
- Smoothing Roughness of SiC Membrane Surface for X-Ray Masks
- Preparation of High Coercive-Force Al-Substituted Bi-DyIG Fine Particles and Coating Films (特集:光磁気記録・磁性薄膜)