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Faculty Of Pharmaceutical Sciences Tokyo University Of Science | 論文
- Rasfonin, a New Apoptosis Inducer in ras-dependent Cells from Talaromyces sp.
- Cytovaricin B, a New Inhibitor of JAK-STAT Signal Transduction Produced by Streptomyces torulosus
- Antiadhesive Sites Present in the Fibronectin TypeIII-Like Repeats of Human Plasma Fibronectin
- Antiadhesive Sites Present in the Fibronectin Type III-Like Repeats of Human Plasma Fibronectin(Molecular and Cell Biology)
- A comparative study of nitric oxide, glutathione, and glutathione peroxidase activities in cerebrospinal fluid from children with convulsive diseases/children with aseptic meningitis
- Cytotoxic Activity toward KB Cells of 2-Substituted Naphtho[2,3-b]furan-4,9-diones and Their Related Compounds
- A Facile Method for Deprotection of O-Allylphenols
- Separation of Racemic and Meso-1,2-bis{2-[(2-bromo-4,5-dimethoxyphenyl)hydroxymethyl]-4,5-dimehooxbenzyl}-4,5-dimethoxybenzenes by Host-guest Inclusion.
- Synthesis and Characterization of Bis[1.1.1]orthocyclophano-18-crown-6 Compounds.
- Auger Analysis Across an Interface Between Cr Film and Pure Silica(Physics, Process, Instrument & Measurements)
- A Study About Atomic Interaction at the Interface of Transient-Metal/Ceramics
- Auger Analysis of the Interface between 3d-Metals and Silica : Transition of chemical bonding throurh metal/ceramic interface (II)
- Applicaion of Auger Analysis to Titanium/Silica Interface : Transition of chemical bonding through metal/ceramic interface (I)
- Si Single-Electron Transistors with High Voltage Gain
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
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