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Electrotechnical Lab. Ibaraki Jpn | 論文
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
- Reciprocation Characteristics of a Magnet Levitated above a YBa_2Cu_3O_x Superconductor
- Damping Characteristics of a Magnet Oscillating above a YBCO Superconductor
- Application of Domain Transfer to Magneto-optical Recording: Domain Stabilization during Readout
- Second Harmonic Generation from Si_Ge_x Epitaxial Films with a Vicinal Face:Film Thickness Dependence
- Optical Second Harmonic Generation in Si_Ge_x Film Epitaxially Grown on Si(100)
- Relationship between Water Diffusivity of Dielectric Films and Accelerated Hot Carrier Degradation Caused by Water
- Water Diffusivity of Dielectric Films Evaluated with Use of D_2O
- Junction Properties of Polycrystalline Diamond / Hydrogenated Amorphous Silicon p-n Heterojunctions
- Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction
- Superconducting Properties of Grain-Oriented Samples of Y_1Ba_2Cu_3O_y
- Temperature and Magnetic Field Dependence of the Critical Current in Polycrystalline Ba_2YCu_3O_y : Electrical Properties Condensed Matter
- Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity
- Nitridation of Gaps (001) Surface Studied by Auger Electron Spectroscopy
- Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
- Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface