スポンサーリンク
Electronics And Telecommunications Res. Inst. Taejon Kor | 論文
- Performance analyses of GaAs PHEMT for phase difference in millimeter waves
- Performance analyses of GaAs PHEMT for phase difference in millimeter waves
- Future Semiconductor Technology & System IC 2010
- Future Semiconductor Technology & System IC 2010
- Future Semiconductor Technology & System IC 2010
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- Novel Micromachined Coplanar Waveguide Transmission Lines for Application in Millimeter-Wave Circuits
- High Power Operations of 980 nm Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Pump Lasers Prepared by Multi-step Metalorganic Vapor Phase Epitaxial Growth with Ion Implanted Channels
- Crystallization and Conduction Mechanisms on Amorphous PbTiO_3
- Analysis of Fatigue Characteristics in Fe-doped Pb(Zr_Ti_)O_3 Thin Films by Switching Currents
- Ferroelectricity and Electric Conduction Characteristics of Sr-Modified Lead Zirconate Titanate Thin Film Capacitors
- Thermal and Dielectric Properties of Amorphous LiNbO_3
- Simulated Performance of ArF Excimer Laser Lithography Optics
- Simulated Performance of ArF Excimer Laser Lithography Optics
- Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Fabrication of 1×4 Optical Switch with Gain Using Dual InGaAsP/InP Laser Diode Amplifier
- Comparison of Fe- and p/n/p-Doped InP as a Current Blocking Layer for Monolithically Integrated InGaAsP/InP Laser Diodes with Passive Waveguides