Comparison of Fe- and p/n/p-Doped InP as a Current Blocking Layer for Monolithically Integrated InGaAsP/InP Laser Diodes with Passive Waveguides
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-02-15
著者
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Kim K
Micro-electronics Technical Laboratory Etri
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Kim Hong
Micro-electronics Technical Laboratory Etri
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Kim Hong
Opto-electronics Section Electronics And Telecommunications Research Institute
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Kim Hong
Micro-electronics Technical Laboratory
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Kim Jin
Institute Of Basic Science University Of Ulsan
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Kim J
Hoseo Univ. Chungnam Kor
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Kim K
Hynix Semiconductor Inc. Chungchongbuk‐do Kor
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Lee S
Photonics Research Center Korea Institute Of Science And Technology
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Lee Seok
Division Of Hematolgoy Catholic Hematopoietic Stem Cell Transplantation Center College Of Medicine T
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Pyun K
Electronics Telecommunication Res. Inst.(etri) Taejon Kor
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Kim H
Electronics And Telecommunications Res. Inst. Taejon Kor
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Lee Sang
Micro-electronics Technical Laboratory Etri
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Kim J
Micro-electronics Technical Laboratory Etri
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LEE Sangmin
Optoelectronics Section, Electronics and Telecommunications Research Institute
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KIM Kangho
Optoelectronics Section, Electronics and Telecommunications Research Institute
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OH Kwang
Optoelectronics Section, Electronics and Telecommunications Research Institute
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KIM Jeong
Optoelectronics Section, Electronics and Telecommunications Research Institute
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OH Dae
Optoelectronics Section, Electronics and Telecommunications Research Institute
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KIM Hong
Optoelectronics Section, Electronics and Telecommunications Research Institute
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PYUN Kwang
Optoelectronics Section, Electronics and Telecommunications Research Institute
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Oh K
Telecommunication Basic Research Laboratory Electronics And Telecommunications Research Institute
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Oh Kwang
Micro-electronics Technical Laboratory Etri
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Lee Seok
Photonics Research Center Korea Institute Of Science And Technology
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Oh Dae
Optoelectronics Section Electronics And Telecommunications Research Institute
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Lee S
Department Of Hematology Catholic Blood And Marrow Transplantation Center College Of Medicine Seoul
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