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Electrical Communication Laboratory | 論文
- Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Observations of Negative Resistance Phenomena and Oscillations in Si-SiO_2-Metal Diodes
- A Negative Resistance in a MOS Structure
- Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
- Noise Characteristics in Silicon Photodiodes
- The Structure of Evaporated Barium Films
- Deep Trap Levels in Silicon P-N Junctions
- Microwave Generation of Harmonics in a Static Magnetic Field
- Hologram Reconstruction by Incoherent Light. I. : Theoretical Foundation
- Negative Resistance in Rare Gases
- Deterioration of Ge Esaki-Diodes
- Polarization Reversal in Triglycine Sulphate Crystal
- Secondary Electron Emission from Oxide-Coated Cathode
- Cold-emitting Cathode Materials
- New Cold Cathode Using Magnesium Oxide
- On the Release of Alkaline Earth Metals by the Electron Dissociation of Oxide Films Evaporated from the Oxide Coated Cathodes
- Electron Microscope Study of the Decomposition Process of Oxide Coated Cathodes
- Esaki-Diodes with Bending-Introduced Dislocations
- Effect of Uniaxial Stress on Germanium p-n Junctions (II)