Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-07-15
著者
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Igo Takeo
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Igo Takeo
Electrical Communication Laboratory Nippon Telegraph And Telephone Corporation
-
Igo Takeo
Electrical Communication Laboratory
関連論文
- Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
- Noise Characteristics in Silicon Photodiodes
- Effect of Compensation on ESR Spectrum in Heavily Doped n-Silicon
- Magnetic Field Depemdence of the Spin Lattice Relaxation Time of Donor Electrons in Compensated Silicon
- Passage Effect in the Electron Spin Resonance of Fe-Doped Silicon
- Spin-Lattice Relaxation in Compensated n-Type Silicon