Passage Effect in the Electron Spin Resonance of Fe-Doped Silicon

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1961-07-05

著者

• Igo Takeo

  Electrical Communication Laboratory

関連論文

• Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
• Noise Characteristics in Silicon Photodiodes
• Effect of Compensation on ESR Spectrum in Heavily Doped n-Silicon
• Magnetic Field Depemdence of the Spin Lattice Relaxation Time of Donor Electrons in Compensated Silicon
• Passage Effect in the Electron Spin Resonance of Fe-Doped Silicon
• Spin-Lattice Relaxation in Compensated n-Type Silicon

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