Magnetic Field Depemdence of the Spin Lattice Relaxation Time of Donor Electrons in Compensated Silicon

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概要

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• In this note reported are measurements of the spin latrice relaxation times of several compensated silicon samples at 2°K and K-band frequencies (about 8500 Oe). We reported in a previous paper that the spin lattice relaxation time, Ts, of donor electrons in compensated silicon depends strongly on the degree of compensation, K=N_A/N_D(N_A,N_D; ac-ceptor and donor concentration), and behaves quite differntly from that in uncompensated crystal. It was suggested that this probably came from the hopping moticn of the donor electron between nearby occupied and unoccupied donors (donor pair). Soon after Sugihara proposed a theory of the spin lattice relaxation of donore electrons in compensated silicon, which was based on a model as following: fast-relaxing centers plus enough rapid process of energy transfer from donor electrons to those centers exist. The fast-relaxing center is the donor pair satisfying certain conditions and small in number. The theory, though crude ap-proximations were made, gave values of correct order for T_s at 2°K and explained the K and N_p dependences of T_s in the region of small K. The temperature dependence could not, explained entirely. The theory predicted a vanishing dependence of T_s on the magnetic field, with which this report concerns. To investigate the magnetic field dependence of T_s we performed measurements at K-band frequencies. The magnetic fields were thus raised up to about 2.5 times the previous fields. The relaxation time was measured in a manner simller to that in the previous experiment. The microwave cavity used was a tunable cylindrical one which operates in the TE_<012> mode. Samples in this work were selected from the previous ones in a variety of donor concentrations and degrees of compensation. They have dimensions of about 1×4×10 mm^3. The magnetic field was applied parallel to the {110} direction in teh (111) plane.

• 社団法人日本物理学会の論文
• 1964-06-05

著者

• Igo Takeo

  Electrical Communication Laboratory Nippon Telegraph And Telephone Corporation

• Igo Takeo

  Electrical Communication Laboratory

• IGO Takeo

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation

関連論文

• Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
• Noise Characteristics in Silicon Photodiodes
• Effect of Compensation on ESR Spectrum in Heavily Doped n-Silicon
• Magnetic Field Depemdence of the Spin Lattice Relaxation Time of Donor Electrons in Compensated Silicon
• Passage Effect in the Electron Spin Resonance of Fe-Doped Silicon
• Spin-Lattice Relaxation in Compensated n-Type Silicon

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