Spin-Lattice Relaxation in Compensated n-Type Silicon

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概要

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• Spin-lattice relaxation rate, 1/T_s, of donor electrons in phosphorus and boron doped silicon was studied at liquid helium temperature as a function of the degree of compensation K=N_A/N_D (N_A, N_D: acceptor and donor concentrations). Donor concentrations ranged from approximately 5×10^<15>/cc to 3x10^<16>/cc and the degree of compensation was varied up to 0.8. It was found that 1/T_s increased first with increasing K, reached a maximum at around K=0.5〜0.6 depending on N_D, and then decreased with a further increase in K. If a power law is assumed for the dependence on temperature T, the relaxation rate goes as T^n, n increasing with K but being independent of N_D. The above experimental results are discussed assuming the hopping of donor electrons. A comprison is made with Sugihara's theory, which gave a rather satisfactory explanation of the experimental results.

• 社団法人日本物理学会の論文
• 1966-05-05

著者

• Igo Takeo

  Electrical Communication Laboratory

• Igo Takeo

  Electrical Communication Laboratory Nippon Telehraph And Telephone Public Corporation

関連論文

• Determination of Compensation Ratio in Silicon by an Electron Spin Resonance Method
• Noise Characteristics in Silicon Photodiodes
• Effect of Compensation on ESR Spectrum in Heavily Doped n-Silicon
• Magnetic Field Depemdence of the Spin Lattice Relaxation Time of Donor Electrons in Compensated Silicon
• Passage Effect in the Electron Spin Resonance of Fe-Doped Silicon
• Spin-Lattice Relaxation in Compensated n-Type Silicon

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