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Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University | 論文
- A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
- Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
- Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
- Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
- Growth Rate Enhancement of $(000\bar{1})$-Face Silicon–Carbide Oxidation in Thin Oxide Regime