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Device Development Center Hitachi Ltd. | 論文
- 100億トランジスタのしきい値電圧ばらつき (シリコン材料・デバイス)
- Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections
- New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure (Special Issue on Microelectronic Test Structures)
- Fast Computation of Microscale Temperature Distribution in LSI Chips
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam