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Dept. of Electronics Engineering, National Chiao Tung University | 論文

• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
• High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• An Improved Method for ATM QoS Management
• System Capacity for Cellular DS/CDMA Mobile Radio with Forward-Link Power Control in Shadowing and Multipath Fading Environment

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