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Department of Physics, Dongguk University | 論文
- Role of Insertion Layer Controlling Wavelength in InGaAs Quantum Dots
- Hydrogenation and Annealing Effects on GaN Epilayers Grown on Sapphire Substrates
- Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- Visible-Ultraviolet Polarized Reflectivity Spectra of Anisotropically Aligned Single-Walled Carbon Nanotube Films
- Effects of Sulfur Treatment and Hydrogen Plasma Treatment on GaAs
- Effects of Thermal Annealing on the Au/Ni and the Au/Ni/Si/Ni Contact Properties of p-type GaN Epilayers
- Multidetector Row Computed Tomography Noninvasively Assesses Coronary Reperfusion After Thrombolytic Therapy in Patients With ST Elevation Myocardial Infarction
- Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effects of Hydrogenation and Annealing on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates
- New Method of the Determination of HgCdTe/CdZnTe Composition by Infrared Transmission