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Department of Physical Science, Graduate School of Engineering Science, Osaka University | 論文
- LFA-1 decreases the antigen dose for T cell activation in vivo
- LFA-1-dependent lipid raft recruitment of DNAM-1 (CD226) in CD4^+ T cell
- Electron-Beam-Induced Oxidation for Single-Electron Devices
- Transport Properties and Fabrication of Coupled Electron Waveguides
- Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires
- Estimation of Damage Induced by Focused Ga Ion Beam Irradiation
- ^Cd(←^In) Time Differential Perturbed Angular Correlation (TDPAC) Spectroscopy in Fe/Ag Films
- Anisotropic Spin Fluctuations in Heavy-Fermion Superconductor CeCoIn_5 : In-NQR and Co-NMR Studies
- ^Ta (← ^Hf) Time-Differential Perturbed Angular Correlation Spectroscopy of Hf/Fe Multilayers
- Direct Patterning of Spin-on Glass by Focused Ion Beam Irradiation
- Ru-NQR and NMR Study of Metamagnetic Transition in CeRu_2Si_2
- Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
- Non-Fermi Liquid Behavior in Dilute Quadrupolar System Pr_xLa_Pb_3 with x ≤ 0.05
- Non-Fermi Liquid Behavior in Dilute Quadrupolar System Pr_xLa_Pb_3 with x ≦ 0.05
- Microarray Analysis of Temporal Gene Responses to Ionizing Radiation in Two Glioblastoma Cell Lines : Up-regulation of DNA Repair Genes
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface