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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5K
- An 8-Bit 600-MSps Flash ADC Using Interpolating and Background Self-Calibrating Techniques
- P3-34 Nonradiative Recombination Process in Semi-insulating 6H-SiC Bulk Single Crystals Evaluated by Photoacoustic Spectroscopy(Poster session 3)
- P3-33 Thermal Diffusivity of Semi-Insulating 6H-SiC Single Crystal Wafers Evaluated by Photopyroelectric (PPE) Method(Poster session 3)
- Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO_3 Films with a Very Smooth Surface
- Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Substitutional C Incorporation into Si_C_y Alloys Using Novel Carbon Source, 1, 3-Disilabutane
- Characterization and Device Application of Tensile-Strained Si_C_y Layers Grown by Gas-Source Molecular Beam Epitaxy
- Characterization and Comparison of Strained Si_C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact