スポンサーリンク
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology | 論文
- Improved Reliability Characteristics of Ultrathin SiO_2 Grown by Low Temperature Ozone Oxidation
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices