スポンサーリンク
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan | 論文
- Prevalence of Mutations in the FGFR3 Gene in Individuals with Idiopathic Short Stature
- Procedures for prevention of perinatal group B streptococcal diseases : a multicenter questionnaire survey of hospitals in the Kyoto Neonatal Disease Study Group, Japan
- Excitation Mechanisms in Moderate-Energy K^+-Ne Collisions(Atomic and molecular physics)
- Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method
- 23 Effects of the earlier initiation of GH therapy on the final height and starting time of gonadot ropin replacement in children with multiple pituitary hormone deficiency.
- Current Controversy on Growth Hormone Therapy in Non-Growth Hormone Deficient Short Stature
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Electrical Resistivity and Thermal Expansion of CeAs
- Alpha Fetoprotein Producing Early Gastric Cancer with Metachronous Liver Metastasis : A Report of Two Cases
- Fabrication of Al/Al3Ti Functionally Graded Materials by Reaction Centrifugal Mixed-Powder Method
- Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition
- Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
- Experimental Study on Severe Plastic Deformation of Ti by Novel Equal-Channel Angular Pressing
- Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current
- Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells
- Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
- Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
- Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
- Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts
- Optimization of a Tip with Carbon Nanofibers for Improved Field Emission Properties