Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method

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概要

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• CuxZnyS thin films were deposited on indium--tin oxide-coated glass substrates by the electrochemical deposition (ECD) method using aqueous solutions containing CuSO4, ZnSO4, and Na2S2O3. The film deposited under optimum conditions exhibited a high optical transmission, and its energy band gap was about 3.2 eV. It was confirmed that CuxZnyS showed p-type conduction and photosensitivity. To fabricate a ZnO/CuxZnyS heterojunction, an n-type ZnO thin film was deposited on CuxZnyS by ECD. In a current--voltage measurement, the heterojunction showed rectification properties.

• 2011-04-25

著者

• Yang Kai

  Department Of Electronic Engineering Beijing Institute Of Technology

• Yang Kai

  Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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