スポンサーリンク
Department of Electronics, Himeji Institute of Technology | 論文
- Measurement of MOS Leakage Conductance by Means of the Lateral Photovoltaic Effect
- Lateral Photovoltaic Effect in the Weakly Inverted and in the Depleted MOS Interface Layers
- Experimental Verification of the Small-Signal Theory of the Lateral Photovoltaic Effect in MOS Structures
- Lateral Photovoltaic Measurements of Electrical Properties of SiAl:H/n-Type Si Structures
- Fill-Factor Calculation of Solar Cells Affected by Sheet Resistance of Surface Layer
- A Position-Sensitive MOS Device Using Lateral Photovoltaic Effect
- Oxidation of Si by Microwave-Excited Oxygen-Plasma through Protective Al Coating
- High Conductive P-Type Films of Si_Al_x:H Fabricated by Co-Sputtering and Subsequent Annealing
- Dynamic Characteristics of the Lateral Photovoltaic Effect and Their Application to the Measurement of Junction Capacitance
- Application of Lateral Photovoltaic Effect to the Measurement of the Physical Quantities of P-N Junctions : Sheet Resistivity and Junction Conductance of N^+_2 Implanted Si
- Lateral Photovoltaic Effect Observed in Nitrogen Ion-Implanted P-Type Si : the Relation between the Dose and the Photovoltage