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Department of Electronic Materials Engineering, Fukuoka Institute of Technology | 論文
- Force-Displacement Characteristics of Fluxoid Lattice and Pinning Potential in Y-Ba-Cu-O Bulk Superconductor
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method
- Iron-Related Donor Level in N-Type Silicon
- Solid Solubility of Cobalt in Silicon
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Diffusion Coefficient of Cobalt in Silicon
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Energy Levels and Solubility of Electrically Active Cobalt in Silicon Studied by Combined Hall and DLTS Measurements
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy