スポンサーリンク
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan | 論文
- Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy : Electrical Properties of Condensed Matter
- Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Fabrication of Crystalline HfO2 High-$\kappa$ Dielectric Films Deposited on Crystalline $\gamma$-Al2O3 Films
- Multichannel $5 \times 5$-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates
- Current–Voltage Characteristics of $\gamma$-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
- Electron Emission Characteristic from Pb(Zr,Ti)O3 Thin Plate by Infrared Light Irradiation