スポンサーリンク
Department of Electrical and Electronic Engineering, The University of Tokushima | 論文
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Role of Dislocation in InGaN Phase Separation
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Partially Relaxed Magnetohydrodynamic Equilibria with Bias-Flux Leakage Obtained in a Helicity-Driven Spheromak
- Joule Heating of a Low-Pressure Plasma Jet by means of an Applied Magnetic Field
- Coagulation and Fibrinolysis Abnormalities the Acute Stage of Hypertensive Intracerebral Hemorrhage, with Special Reference to Fibrinopeptides A and Bβ15-42
- Finite-Element Analysis of Acoustic Surface Waveguides Using Approximate Analytical Solutions : Fundamentals
- Application of Finite Element Method to Acoustic Guidedwave Problems : Physical Acoustics I
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Two-Dimensional Device Simulation of 0.05 μm-Gate AlGaN/GaN HEMT(Heterostructure Microelectronics with TWHM2003)
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition