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Department of Electrical and Computer Engineering, Nagoya Institute of Technology | 論文
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Charge-Density Wave Instabilities in Orthorhombic γ-Mo_4O_ : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Charge Density Waves
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
- Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Higher Order Delta-Sigma AD Converter with Optimized Stable Coefficients(Analog Signal Processing)(Regular Section)
- Correlation of Transfer Function Implementation on Delta-Sigma Modulator Stability Analysis
- Microwave Conductivity and Relaxation of Excess Phonons in CdS