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Department of Electrical Engineering, Hokkaido University | 論文
- Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
- CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)
- Reaction-Diffusion Devices Using Minority-Carrier Transport in Semiconductors
- Deep Electron Traps in Undoped GaAs Grown by MOCVD
- KIBRA Co-Localizes with Protein Kinase Mζ (PKMζ) in the Mouse Hippocampus
- On the sign problem of Dedekind sums
- Quantum Cellular Automaton Device Using the Image Charge Effect
- A vMOS Cellular-Automaton Device for Differential-of-Gaussian Filtering
- Directional Single-Electron-Tunneling Junction
- Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
- Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
- Single-Electron Logic Systems Based on a Graphical Representation of Digital Functions(Novel Device Architectures and System Integration Technologies)
- Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- An Adaptive Silicon Retina Performing an Edge Extraction with a MOS-Type Spatial Wiring and Smart Pixel Circuits