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Department of Electrical Engineering, Faculty of Engineering, Osaka University | 論文
- Electric Field Breakdown of Lateral Schottky Diodes of Diamond
- Ohmic Contact Formation for N-Type Diamond by Selective Doping
- Enhancement/Depletion Surface Channel Field Effect Transistors of Diamond and Their Logic Circuits
- Heterogeneity of Envelope Molecules Shown by Different Sensitivities to Anti-V3 Neutralizing Antibody and CXCR4 Antagonist Regulates the Formation of Multiple-Site Binding of HIV-1
- Adsorption and Infectivity of Human Immunodeficiency Virus Type 1 Are Modified by the Fluidity of the Plasma Membrane for Multiple-Site Binding
- Chemically Induced Infection of CD4-Negative HeLa Cells with HIV-1
- 0767 Quality of Life Scores in Patients With Effort Angina Pectoris After Percutaneous Transluminal Coronary Angioplasty
- 0384 DOSE CORONARY ARTERIOSCLEROSIS PROGRESS IN HIGHER RATIO IN THE PATIENT WITH ARTERIOSCLEROTIC OBLITERANS(ASO)?
- Human Immunodeficiency Virus Type 1 Neutralization by a Single Molecule of V3-Targeted Antibody
- The Application of Superconducting Ceramics as Substrates for the Electrochemical Deposition of Conducting Polymers and Metals
- Chemical-Vapor-Deposited Diamond Overgrowth on Platinum Thin Films Deposited on Diamond Substrates
- Simultaneous Chemical Doping and Electrochemical Undoping in Conducting Polymer
- Blue Electroluminescence from Poly(p-phenylene)Solubilized by Perfluoropropylation
- Syntheses and Properties of Fluoroalkylated Oligomers Containing Oligo(oxyethylene) Units
- Fabrication and Characterization of Metal-Semiconductor Field-Effect Transistor Utilizing Diamond Surface-Conductive Layer
- Identification of parental chromosomes and changes of artificial, intergeneric F_1 hybrid between Dendranthema horaimontana and Nipponanthemum nipponicum by fluorescence genomic in situ hybridization (GISH) and fluorescence in situ hybridization (FISH)
- High-Quality Homoepitaxial Diamond Films Grown at Normal Deposition Rates : Structure and Mechanical and Thermal Properties of Condensed Matter
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Space Charge Characteristics of Fullerenol and Carbon Nanotube Doped Polyurethane Elastomer (PUE) Actuators(Characterization of Organic Devices)(Recent Progress in Organic Molecular Electronics)