スポンサーリンク
Department of Electric and Computer Engineering Nagoya Institute of Technology | 論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Study on Surface Acoustic Wave Characteristics of SiO_2/Interdigital-Transducer/ZnO/Diamond Structure and Fabrication of 2.5 GHz Narrow Band Filter
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model