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Department of Applied Physics and Physico-informatics, Keio University | 論文
- Multiband Superconductivity in Heavy Fermion Compound CePt_3Si without Inversion Symmetry : An NMR Study on a High-Quality Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- High Purity Isotopically Enriched ^Si and ^Si Single Crystals : Isotope Separation, Purification, and Growth
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga : Effects of Doping-Compensation and Magnetic Field
- Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions
- Evidence for Unconventional Superconducting Fluctuations in Heavy-Fermion Compound CeNi_2Ge_2(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Cooperative Phenomenon of Ferromagnetism and Unconventional Superconductivity in UGe_2 : A ^Ge-NQR Study under Pressure(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Evidence for Uniform Coexistence of Ferromagnetism and Unconventional Superconductivity in UGe_2 : A ^Ge-NQR Study under Pressure(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
- Breakdown of Al/AlO_x/Al Tunneling Junctions
- Highly Sensitive Magnetic Sensing Method Using Magnetoresitance Devices
- Serum lgG Subclasses in Patients with Chronic Osteomyelitis of Mandible
- Necrotizing Fasciitis of the Neck due to an Odontogenic Infection: A Case Report
- Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
- Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
- Fe-N Films Prepared by Dual Ion Beam Sputtering
- Transport Properties and Electronic States in the Layered Thermoelectric Rhodate (Bi_Pb_x)_Ba_2Rh_O_y(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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