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Department of Applied Chemistry, Tokyo University of Agriculture and Technology | 論文
- Vapor Phase Epitaxy of In_xGa_N Using InCl_3, GaCl_3 and NH_3 Sources
- Growth of NdBaCu0 Superconducting Thin Films Using Mist Microwave-Plasma Chemical Vapor Deposition with Dual Sources
- In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy
- Thermodynamic Analysis of In_xGa_N Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy
- Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100)GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy
- New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH_3)_3Ga, HCl and NH_3
- Influence of Sr Content on Tl-Ba-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Preparation of Tl-Systerm Superconducting Thin Films by the Mist Microwave-Plasma Chermical Vapor Deposition Method
- Behavioral Responses to the Alarm Pheromone of the Ant Camponotus obscuripes (Hymenoptera: Formicidae)(Behavior Biology)
- Pyrolysis of Coal Tar (II) -Functional Group Analysis for Heavy Fraction of Coal Tar-
- Pyrolysis of Coal Tar (I) -Effects of Reactions Conditions on Products Yields and Composition of Light Fraction-
- Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test
- Artificial Siderophores as a Model for Ferrichrome. Control of the Δ-or 〓Λ-Configuration of Iron(III) Complexes of Tripodal Hydroxamates by Linking to the C - or N-Terminus of the Same L-Alanyl-L- alanyl-β-(N-hydroxy) alanine Unit
- Solid Composition of In_Ga_xAs Grown by the Halogen Transport Atomic Layer Epitaxy : Condensed Matter
- Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AIN
- Thermodynamical Analysis of AlGaInP Vapor Growth
- Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method
- Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
- Thermodynamic Calculation of the VPE Growth of In_Ga_xAs_yP_ by the Trichloride Method
- In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy