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Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin | 論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
- Transport Properties in InP/InAlAs Type II Single Heterostructure
- Measurement of the Energy Spread of the Cold Relativistic Electron Beam Using Thomson Backscattering of a High Power CO_2 Laser
- Direct Measurement of the Energy Distribution of an Intense Relativistic Electron Beam
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Optical Properties of an InGaAlAs/InP Type-II Superlattice
- Electroabsorption in an AlInAs/InP Type II Superlattice
- Negative Differential Conductivity of Photoconducting KTaO_3
- Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes