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Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology | 論文
- Novel Electroluminescent PPV Copolymers Containing Si-phenyl and Difluorovinylene Units
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- The Migration Path of Co Ions in Co-Substituted Spinel Ferrite Thin Films during Magnetic Annealing
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO : Semiconductors
- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Density Functional Theoretical Study on the pK_a Values of Bipyridines
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
- Syntheses and Characterization of the Alternating Polymers Based on Cyclopenta[def]phenanthrene Backbone with Spiro Group
- Synthesis and Characterization of Novel Conjugated Polymer with 4H-Cyclopenta[def]phenanthrene and the Sulfanyl Group
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- DFT Calculation of Site-specific Acid Dissociation Constants of Purine Nucleobases
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis