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Department Of Electronic Engineering Faculty Of Engineering Osaka University | 論文
- Difference in Doping Effects of C_ and C_ in Poly(3-hexylthiophene)
- Design Philosophy of a Data-Driven Processor: Q-p
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- 28aXD-9 リラクサ強誘電体固溶体PZNT,PMNTの圧電特性への圧力効果(28aXD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 28aXD-12 Pb(In_Nb_)O_3のX線・中性子散乱(28aXD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- Pressure Dependence of Piezoelectric Properties of Pb(Zn_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Effect-of Electric Fields on Domain Structure and Dielectric Properties of Pb(ln_Nb_)0_3-PbTi0_3 near Morphotropic Phase Boundary
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Contact Electrification on Thin SrTiO_3 Film by Atomic Force Microscope
- Poly-Si TFTにおけるゲート酸化膜へのホットホール注入と捕獲/放出特性の評価(シリコン関連材料の作製と評価)
- Enhancement of MMP-9 Activity in THP-1 Cells by 7-ketocholesterol and Its Suppression by the HMG-CoA Reductase Inhibitor Fluvastatin
- 水素誘起自己組織化および走査トンネル顕微鏡を用いたシリコン表面ナノ構造形成
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
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