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Department Of Electronic Engineering Chubu University | 論文
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- 93. Studies on the Tinels Sign in Peripheral Nerve Regeneration
- Threshold and Energy Distribution for ECR Discharge Plasma Source
- Regulation of the Cell Cycle by Steroid Hormones in Uterine Adenocarcinoma Cells by means of Flow Microfluorometry
- Treatment of Urinary Retention with Biofeedback method with Operant Reward
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Development of a Circularizer for an Endless Mirror Device with l=2 and l=3 Helical Systems
- Control of the Two-Electron-Temperature Plasma Parameter in a DP Device
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy