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Department Of Electronic Engineering Chang-gung University | 論文
- Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
- Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
- Gettering Properties in Praseodymium-Added Crystal Growth
- Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
- Palladium Diffusion Transport in n-Type GaAs
- Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
- Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
- The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
- Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
- Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides